Session Details

[17p-B3-1~18]6.1 Ferroelectric thin films

Tue. Sep 17, 2024 1:00 PM - 5:45 PM JST
Tue. Sep 17, 2024 4:00 AM - 8:45 AM UTC
B3 (Exhibition Hall B)
Takeshi Kawae(Kanazawa Univ), Goon Tan(Osaka Metro. Univ.)

[17p-B3-1]Crystal Structure and Ferroelectric Properties of Self-polarized (001)-oriented Epitaxial (Bi,K)TiO3-PbTiO3 films grown by Hydrothermal Method

〇(D)Yuxian Hu1, Taichi Murashita1, Kazuki Okamoto1, Hiroshi Funakubo1 (1.Tokyo Tech)
Comment()

[17p-B3-2]Piezoelectric properties of polyvinylidene cyanide (VDCN) / vinyl acetate (VAc) copolymer induced by rapid polarization freezing

〇(M2)Kosei Yoshitake1, Hidekazu Kodama2, Takashi Nakajima1 (1.Tokyo Univ. of Sci, 2.Kobayasi Inst.)
Comment()

[17p-B3-3]Crystal structure and electrical properties of BiFe1-xMnxO3 epitaxial films

〇(B)Kira Fujihara1, Sengsavang Aphayvong1, Meika Takagi1, Kohei Takaki1, Yohane Fujibayashi1, Norihfumi Fujimura1, Takeshi Yoshimura1 (1.Osaka Metro Univ.)
Comment()

[17p-B3-4]Fabrication and evaluation of BiFe(1-x)MnxO3 thin film on SOI substrate

〇(M1)Meika Takagi1, Sengsavang Aphayvong1, Yohane Fujibayashi1, Kira Fujihara1, Syuichi Murakami2, Hidemasa Yamane2, Norifumi Fujimura1, Takeshi Yoshimura1 (1.Osaka Metro. Univ., 2.ORIST.)
Comment()

[17p-B3-5]Intrinsic electromechanical coupling coefficient k332 evaluation method
from HBAR using the difference between dielectric constant εTand εS

〇(M2)Hiroki Uchida1,2, Kohei Ekida1,2, Yohkoh Shimano1,2, Takahiko Yanagitani1,2 (1.Waseda Univ., 2.ZAIKEN)
Comment()

[17p-B3-6]Non-destructive measurement of longitudinal piezoelectric properties for thin films

〇Aphayvong Sengsavang1, Meika Takagi1, Yohane Fujibayashi1, Kira Fujihara1, Shuichi Murakami2, Hidemasa Yamane2, Norifumi Fujimura1, Takeshi Yoshimura1 (1.Osaka Metro. Univ, 2.ORIST)
Comment()

[17p-B3-7]Frequency dependence of piezoelectric response for (100)/(001)-oriented tetragonal Pb(Zr,Ti)O3 films

〇(D)MIKI NAKAHATA1, KAZUKI OKAMOTO1, KEISUKE ISHIHAMA2, TAKAO SHIMIZU3, TOMOYUKI KOGANEZAWA4, Rosantha Kumara4, TOMOTAKA NAKATANI4, OSAMU IKEDA4, OSAMI SAKATA4, TOMOAKI YAMADA5,6, HIROSHI FUNAKUBO1 (1.Tokyo Tech., 2.Univ. Tokyo, 3.NIMS, 4.JASRI, 5.Nagoya Univ., 6.MDX Tokyo Tech.)
Comment()

[17p-B3-8]Poling Effect on Pyroelectric and Electrocaloric Effects of Ferroelectric Thin-Films

〇Jun Usami1, Yuki Okamoto1, Hisashi Inoue1, Takeshi Kobayashi1, Hiroyuki Yamada1 (1.AIST)
Comment()

[17p-B3-9]The electronic state of correlated ferroelectric YMnO3 thin films and
the photo-induced current

〇Sodai Ichikawa1, Takeshi Yoshimura1, Norifumi Fujimura1 (1.Osaka Metro. Univ.)
Comment()

[17p-B3-10]Fabrication of Ferroelectric Thin Films Using (Hf, Zr)O2 Buffer Layers and Spin-Coating Technique

〇Risa Kataoka1, Haining Li1, Takeshi Kijima1,2, Hiroyasu Yamahara1, Hitoshi Tabata1, Munetoshi Seki1 (1.Univ. of Tokyo, 2.Gaianixx Inc.)
Comment()

[17p-B3-11]Fabrication of carbon nanotube electrodes on ferroelectric BiFeO3 thin films

〇(M1)Yoshiki Kagobayashi1, Seiji Nakashima1, Ai Osaka1, Hironori Fujisawa1 (1.Univ of Hyogo.)
Comment()

[17p-B3-12]Effect of dynamic polarization on electro-optic properties in epitaxial PbZrO3 thin films

〇Shinya Kondo1, Haruka Kondo1, Tomoaki Yamada2, Takashi Teranishi1, Akira Kishimoto1 (1.Okayma Univ., 2.Nagoya Univ.)
Comment()

[17p-B3-13]A novel ferroelectric capacitor with asymmetric double layer structure of MOCVD-PZT and sputtered PLZT for high-reliability FeRAM

〇Wensheng Wang1, Ko Nakamura1, Takashi Eshita1, Masaaki Nakabayashi1, Kazuaki Takai1, Kenji Suezawa1, Mitsuaki Oikawa1, Nozomi Sato1, Soichiro Ozawa1, Kouichi Nagai1, Satoru Mihara1, Yukinobu Hikosaka1, Hitoshi Saito1 (1.FUJITSU SEMICONDUCTOR MEMORY SOLUTION LIMITED)
Comment()

[17p-B3-14]Preparation of BaTiO3 Thin Films by IJP Using Fine Particle Dispersion Liquid

〇Masaki Yamaguchi1, Seryu Nakajima1, Takashi Yamamoto2 (1.Shibaura Inst. of Tech., 2.Osaka Met. Univ.)
Comment()

[17p-B3-15]Time-resolved SNDM method for HAFeR technology development

〇Yasuo Cho1, Kohei Yamasue2 (1.Tohoku Univ. NICHe, 2.Tohoku Univ. RIEC)
Comment()

[17p-B3-16]Development of PZT large-area recording media for practical ferroelectric recording

〇Yasuo Cho1, Yoshiomi Hiranaga2 (1.Tohoku Univ. NICHe, 2.Tohoku Univ. RIEC)
Comment()

[17p-B3-17]Fabrication of ferroelectric tunnel junctions using (Ba,Sr)TiO3 thin films
and characterization of their memristive properties

〇(M1C)Yuki Muto1, Xueyou Yuan1, Masahito Yoshino1, Takanori Nagasaki1, Tomoaki Yamada1 (1.Nagoya Univ.)
Comment()

[17p-B3-18]Single-Crystalline PbTiO3-Based Ferroelectric Memristors for Synaptic Plasticity Emulation

〇(DC)Haining Li1, Takeshi Kijima1,2, Risa Kataoka1, Hiroyasu Yamahara1, Hitoshi Tabata1, Munetoshi Seki1 (1.Univ. of Tokyo, 2.Gaianixx Inc.)
Comment()