[17p-B3-1~18] 6.1 Ferroelectric thin films | The 85th JSAP Autumn Meeting 2024

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Session Details

Oral presentation6 Thin Films and Surfaces : 6.1 Ferroelectric thin films

[17p-B3-1~18]6.1 Ferroelectric thin films

Tue. Sep 17, 2024 1:00 PM - 5:45 PM JST
Tue. Sep 17, 2024 4:00 AM - 8:45 AM UTC

B3 (Exhibition Hall B)

Takeshi Kawae(Kanazawa Univ), Goon Tan(Osaka Metro. Univ.)

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1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-B3-1]Crystal Structure and Ferroelectric Properties of Self-polarized (001)-oriented Epitaxial (Bi,K)TiO₃-PbTiO₃ films grown by Hydrothermal Method

〇(D)Yuxian Hu¹, Taichi Murashita¹, Kazuki Okamoto¹, Hiroshi Funakubo¹ (1.Tokyo Tech)

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1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-B3-2]Piezoelectric properties of polyvinylidene cyanide (VDCN) / vinyl acetate (VAc) copolymer induced by rapid polarization freezing

〇(M2)Kosei Yoshitake¹, Hidekazu Kodama², Takashi Nakajima¹ (1.Tokyo Univ. of Sci, 2.Kobayasi Inst.)

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1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[17p-B3-3]Crystal structure and electrical properties of BiFe_1-xMn_xO₃ epitaxial films

〇(B)Kira Fujihara¹, Sengsavang Aphayvong¹, Meika Takagi¹, Kohei Takaki¹, Yohane Fujibayashi¹, Norihfumi Fujimura¹, Takeshi Yoshimura¹ (1.Osaka Metro Univ.)

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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[17p-B3-4]Fabrication and evaluation of BiFe_(1-x)Mn_xO₃thin film on SOI substrate

〇(M1)Meika Takagi¹, Sengsavang Aphayvong¹, Yohane Fujibayashi¹, Kira Fujihara¹, Syuichi Murakami², Hidemasa Yamane², Norifumi Fujimura¹, Takeshi Yoshimura¹ (1.Osaka Metro. Univ., 2.ORIST.)

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2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-B3-5]Intrinsic electromechanical coupling coefficient k₃₃² evaluation method
from HBAR using the difference between dielectric constant ε^Tand ε^S

〇(M2)Hiroki Uchida^1,2, Kohei Ekida^1,2, Yohkoh Shimano^1,2, Takahiko Yanagitani^1,2 (1.Waseda Univ., 2.ZAIKEN)

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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[17p-B3-6]Non-destructive measurement of longitudinal piezoelectric properties for thin films

〇Aphayvong Sengsavang¹, Meika Takagi¹, Yohane Fujibayashi¹, Kira Fujihara¹, Shuichi Murakami², Hidemasa Yamane², Norifumi Fujimura¹, Takeshi Yoshimura¹ (1.Osaka Metro. Univ, 2.ORIST)

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2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-B3-7]Frequency dependence of piezoelectric response for (100)/(001)-oriented tetragonal Pb(Zr,Ti)O₃ films

〇(D)MIKI NAKAHATA¹, KAZUKI OKAMOTO¹, KEISUKE ISHIHAMA², TAKAO SHIMIZU³, TOMOYUKI KOGANEZAWA⁴, Rosantha Kumara⁴, TOMOTAKA NAKATANI⁴, OSAMU IKEDA⁴, OSAMI SAKATA⁴, TOMOAKI YAMADA^5,6, HIROSHI FUNAKUBO¹ (1.Tokyo Tech., 2.Univ. Tokyo, 3.NIMS, 4.JASRI, 5.Nagoya Univ., 6.MDX Tokyo Tech.)

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2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-B3-8]Poling Effect on Pyroelectric and Electrocaloric Effects of Ferroelectric Thin-Films

〇Jun Usami¹, Yuki Okamoto¹, Hisashi Inoue¹, Takeshi Kobayashi¹, Hiroyuki Yamada¹ (1.AIST)

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3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[17p-B3-9]The electronic state of correlated ferroelectric YMnO₃ thin films and
the photo-induced current

〇Sodai Ichikawa¹, Takeshi Yoshimura¹, Norifumi Fujimura¹ (1.Osaka Metro. Univ.)

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3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-B3-10]Fabrication of Ferroelectric Thin Films Using (Hf, Zr)O₂ Buffer Layers and Spin-Coating Technique

〇Risa Kataoka¹, Haining Li¹, Takeshi Kijima^1,2, Hiroyasu Yamahara¹, Hitoshi Tabata¹, Munetoshi Seki¹ (1.Univ. of Tokyo, 2.Gaianixx Inc.)

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3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[17p-B3-11]Fabrication of carbon nanotube electrodes on ferroelectric BiFeO₃ thin films

〇(M1)Yoshiki Kagobayashi¹, Seiji Nakashima¹, Ai Osaka¹, Hironori Fujisawa¹ (1.Univ of Hyogo.)

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4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-B3-12]Effect of dynamic polarization on electro-optic properties in epitaxial PbZrO₃thin films

〇Shinya Kondo¹, Haruka Kondo¹, Tomoaki Yamada², Takashi Teranishi¹, Akira Kishimoto¹ (1.Okayma Univ., 2.Nagoya Univ.)

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4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[17p-B3-13]A novel ferroelectric capacitor with asymmetric double layer structure of MOCVD-PZT and sputtered PLZT for high-reliability FeRAM

〇Wensheng Wang¹, Ko Nakamura¹, Takashi Eshita¹, Masaaki Nakabayashi¹, Kazuaki Takai¹, Kenji Suezawa¹, Mitsuaki Oikawa¹, Nozomi Sato¹, Soichiro Ozawa¹, Kouichi Nagai¹, Satoru Mihara¹, Yukinobu Hikosaka¹, Hitoshi Saito¹ (1.FUJITSU SEMICONDUCTOR MEMORY SOLUTION LIMITED)

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4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[17p-B3-14]Preparation of BaTiO₃ Thin Films by IJP Using Fine Particle Dispersion Liquid

〇Masaki Yamaguchi¹, Seryu Nakajima¹, Takashi Yamamoto² (1.Shibaura Inst. of Tech., 2.Osaka Met. Univ.)

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4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[17p-B3-15]Time-resolved SNDM method for HAFeR technology development

〇Yasuo Cho¹, Kohei Yamasue² (1.Tohoku Univ. NICHe, 2.Tohoku Univ. RIEC)

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5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[17p-B3-16]Development of PZT large-area recording media for practical ferroelectric recording

〇Yasuo Cho¹, Yoshiomi Hiranaga² (1.Tohoku Univ. NICHe, 2.Tohoku Univ. RIEC)

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5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-B3-17]Fabrication of ferroelectric tunnel junctions using (Ba,Sr)TiO₃thin films
and characterization of their memristive properties

〇(M1C)Yuki Muto¹, Xueyou Yuan¹, Masahito Yoshino¹, Takanori Nagasaki¹, Tomoaki Yamada¹ (1.Nagoya Univ.)

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5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardHighlighted Presentation

[17p-B3-18]Single-Crystalline PbTiO₃-Based Ferroelectric Memristors for Synaptic Plasticity Emulation

〇(DC)Haining Li¹, Takeshi Kijima^1,2, Risa Kataoka¹, Hiroyasu Yamahara¹, Hitoshi Tabata¹, Munetoshi Seki¹ (1.Univ. of Tokyo, 2.Gaianixx Inc.)

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Session Details

[17p-B3-1~18]6.1 Ferroelectric thin films

[17p-B3-1]Crystal Structure and Ferroelectric Properties of Self-polarized (001)-oriented Epitaxial (Bi,K)TiO3-PbTiO3 films grown by Hydrothermal Method

[17p-B3-2]Piezoelectric properties of polyvinylidene cyanide (VDCN) / vinyl acetate (VAc) copolymer induced by rapid polarization freezing

[17p-B3-3]Crystal structure and electrical properties of BiFe1-xMnxO3 epitaxial films

[17p-B3-4]Fabrication and evaluation of BiFe(1-x)MnxO3 thin film on SOI substrate

[17p-B3-5]Intrinsic electromechanical coupling coefficient k332 evaluation methodfrom HBAR using the difference between dielectric constant εTand εS

[17p-B3-6]Non-destructive measurement of longitudinal piezoelectric properties for thin films

[17p-B3-7]Frequency dependence of piezoelectric response for (100)/(001)-oriented tetragonal Pb(Zr,Ti)O3 films

[17p-B3-8]Poling Effect on Pyroelectric and Electrocaloric Effects of Ferroelectric Thin-Films

[17p-B3-9]The electronic state of correlated ferroelectric YMnO3 thin films andthe photo-induced current

[17p-B3-10]Fabrication of Ferroelectric Thin Films Using (Hf, Zr)O2 Buffer Layers and Spin-Coating Technique

[17p-B3-11]Fabrication of carbon nanotube electrodes on ferroelectric BiFeO3 thin films

[17p-B3-12]Effect of dynamic polarization on electro-optic properties in epitaxial PbZrO3 thin films

[17p-B3-13]A novel ferroelectric capacitor with asymmetric double layer structure of MOCVD-PZT and sputtered PLZT for high-reliability FeRAM

[17p-B3-14]Preparation of BaTiO3 Thin Films by IJP Using Fine Particle Dispersion Liquid

[17p-B3-15]Time-resolved SNDM method for HAFeR technology development

[17p-B3-16]Development of PZT large-area recording media for practical ferroelectric recording

[17p-B3-17]Fabrication of ferroelectric tunnel junctions using (Ba,Sr)TiO3 thin filmsand characterization of their memristive properties

[17p-B3-18]Single-Crystalline PbTiO3-Based Ferroelectric Memristors for Synaptic Plasticity Emulation

[17p-B3-1]Crystal Structure and Ferroelectric Properties of Self-polarized (001)-oriented Epitaxial (Bi,K)TiO₃-PbTiO₃ films grown by Hydrothermal Method

[17p-B3-3]Crystal structure and electrical properties of BiFe_1-xMn_xO₃ epitaxial films

[17p-B3-4]Fabrication and evaluation of BiFe_(1-x)Mn_xO₃thin film on SOI substrate

[17p-B3-5]Intrinsic electromechanical coupling coefficient k₃₃² evaluation method
from HBAR using the difference between dielectric constant ε^Tand ε^S

[17p-B3-7]Frequency dependence of piezoelectric response for (100)/(001)-oriented tetragonal Pb(Zr,Ti)O₃ films

[17p-B3-9]The electronic state of correlated ferroelectric YMnO₃ thin films and
the photo-induced current

[17p-B3-10]Fabrication of Ferroelectric Thin Films Using (Hf, Zr)O₂ Buffer Layers and Spin-Coating Technique

[17p-B3-11]Fabrication of carbon nanotube electrodes on ferroelectric BiFeO₃ thin films

[17p-B3-12]Effect of dynamic polarization on electro-optic properties in epitaxial PbZrO₃thin films

[17p-B3-14]Preparation of BaTiO₃ Thin Films by IJP Using Fine Particle Dispersion Liquid

[17p-B3-17]Fabrication of ferroelectric tunnel junctions using (Ba,Sr)TiO₃thin films
and characterization of their memristive properties

[17p-B3-18]Single-Crystalline PbTiO₃-Based Ferroelectric Memristors for Synaptic Plasticity Emulation