[17p-B3-1~18] 6.1 Ferroelectric thin films

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-B3-17] Fabrication of ferroelectric tunnel junctions using (Ba,Sr)TiO₃ thin films
and characterization of their memristive properties

〇(M1C)Yuki Muto¹, Xueyou Yuan¹, Masahito Yoshino¹, Takanori Nagasaki¹, Tomoaki Yamada¹ (1.Nagoya Univ.)

Keywords:

Ferroelectric

The memristor is expected to be an element that can be applied to neuro computers. In order to fabricate high-performance memristors, we focused on ferroelectric tunnel junction (FTJ) that can change the polarization direction by applying an electric field and modulate resistance. FTJ consists of a laminated structure of metal, ferroelectric thin film, and metal (semiconductor). It has been reported that FTJ using BaTiO₃ (BTO) thin films as ferroelectric layers and Nb:SrTiO₃ (Nb:STO) as semiconductors show large ON OFF ratios. we thought that using (Ba,Sr)TiO₃ (BST) thin films in the ferroelectric layer would produce memristor operating at lower voltages, and we fabricated them and evaluated their memrisitive characteristics.