[17p-C41-1~11] Plasma direct bonding technology for next-generation semiconductor and new device manufacturing

2:05 PM - 2:35 PM JST(5:05 AM - 5:35 AM UTC)

[17p-C41-3] Mechanism of surface activated bonding

〇Tadatomo Suga^1,2 (1.The University of Tokyo, 2.Meisei University)

Keywords:

surface activation,bonding,interconnect

This paper will examine the current status and challenges of Surface Activated Bonding for room temperature bonding in relation to plasma-activated bonding. In particular, it will discuss the meaning of surface activation, the difference between hydrophilic treatment and ion bombardment for surface activation, and compile the knowledge currently available for metals, semiconductors, and insulator materials. It will also consider future directions.