[17p-C41-1~11] Plasma direct bonding technology for next-generation semiconductor and new device manufacturing

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-C41-8] GaN HEMTs on 1-inch polycrystalline diamond wafers

〇Chiharu Moriyama¹, Keisuke Kawamura², Sumito Ouchi², Hiroki Uratani², Yutaka Ohno³, Koji Inoue³, Yasuyoshi Nagai³, Naoteru Shigekawa¹, Jianbo Liang¹ (1.Osaka Metropolitan Univ., 2.Air Water inc., 3.IMR Tohoku Univ.)

Keywords:

surface activated bonding,GaN,diamond

The transfer of HEMT layers onto large-area polycrystalline diamond is necessary for the practical application of on-diamond structures to improve the heat dissipation of GaN HEMTs. Against this background, we investigated a transfer process using a surface-activated bonding method. As a result, we succeeded for the first time in transferring a HEMT layer onto 1-inch polycrystalline diamond wafers. The characteristics of the fabricated devices will also be reported on the day of the presentation.