[17p-C42-1~11] Emergence of Novel Functions in Nitride and III/V Group Compound Semiconductor Nanostructures

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[17p-C42-5] Selective lateral MOVPE growth of InP on SOI (001) substrates for III-V/Si integration

〇Hiroya Homma¹, Hiroki Sugiyama¹, Tatsurou Hiraki¹, Tomonari Sato¹, Shinji Matsuo¹ (1.NTT)

Keywords:

III-V semiconductor growth on Si,selective growth,MOVPE/MOCVD

In general, it is difficult to achieve high-quality III-V semiconductors on Si by direct growth. We have reported that we could integrate large-area InP films with low threading dislocation density grown in microcavities on SOI (001) substrates by selective lateral growth. However, rotational twin boundaries (RTBs) generated at the {111} growth front facets of Si and III-V semiconductors degrade the crystal quality. In this work, we demonstrated that RTBs can be suppressed to grow InP films on the substrates whose Si seed orientation is appropriately controlled.