[17p-D63-1~16] 7.2 Applications and technologies of electron beams

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[17p-D63-5] High speed latent-pattern imaging for an electron beam resist by laser-based photoemission electron microscopy

〇Hirokazu Fujiwara^1,2,3, Cedric Bareille¹, Mario Okawa¹, Toshiyuki Taniuchi^2,3 (1.ISSP, 2.GSFS, 3.MIRC)

Keywords:

latent image,resist,photoemission electron microscope

If a technique for inspecting latent images could be developed, it would be possible to inspect the drawn pattern without developing the resist. In this study, we tried to visualise the latent image drawn on an electron beam resist using a laser-based photoemission electron microscope. It was elucidated that the electron-beam irradiated areas form a contrast as dark areas. Compared to atomic force microscopy, it was shown that the latent image could be visualised more than 80 times faster. This result proposes a new methodology for pattern inspection technology.