[17p-P06-1~3] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[17p-P06-2] Effect of Au particle diameter on the properties of Au particle sintered bumps for high-density semiconductor mounting

〇Noriaki Nakamura¹, Yuichi Makita¹, Akihito Fujino¹, Kohei Ogawa¹, Teruaki Koizumi¹, Hiroshi Murai¹, Kenichi Inoue¹, Yohei Okada², Haruki Shiratori², Hidehiro Kamiya² (1.TANAKA Kikinzoku Kogyo, 2.TUAT)

Keywords:

Au,bump,bonding

We are proposing bumps with a porous structure using sub-micron Au particles as a bonding material for high-density semiconductor mounting. The bumps can be bonded at 200°C and while having the ability to deform by longitudinal compression, it has the feature of suppressing spread in the horizontal direction. In this time, we will report the characteristics of the Au particle sintered bumps and the effect of Au particle diameter on the properties of the Au particle sintered material and its formation process.