Session Details

[17p-P06-1~3]13.5 Semiconductor devices/ Interconnect/ Integration technologies

Tue. Sep 17, 2024 4:00 PM - 6:00 PM JST
Tue. Sep 17, 2024 7:00 AM - 9:00 AM UTC
P06 (Exhibition Hall A)

[17p-P06-1]Structural design of p-type HEMT using GeSiSn/GeSn heterostructure

〇(M1)Shota Torimoto1, Mitsuo Sakashita1, Masashi Kurosawa1, Osamu Nakatsuka1,2, Shigehisa Shibayama1 (1.Grad. Sch. Eng., Nagoya Univ., 2.IMaSS)
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[17p-P06-2]Effect of Au particle diameter on the properties of Au particle sintered bumps for high-density semiconductor mounting

〇Noriaki Nakamura1, Yuichi Makita1, Akihito Fujino1, Kohei Ogawa1, Teruaki Koizumi1, Hiroshi Murai1, Kenichi Inoue1, Yohei Okada2, Haruki Shiratori2, Hidehiro Kamiya2 (1.TANAKA Kikinzoku Kogyo, 2.TUAT)
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[17p-P06-3]Temperature Dependence of I-V Characteristics Above Room Temperature of Needle Contact and Junction Contact Ge Schottky Barrier Diodes

〇Riku Ando1, Yoriko Suda1, Narihiko Maeda1 (1.Tokyo Univ. of Technology)
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