Presentation Information

[18a-A22-10]Deposition of In-Sn-Zn-O thin film by Mist-CVD method and TFT Characteristics.

〇Fumio Horiguchi1, Shoichi Fukuda1, Keigo Ebato1, Kousaku Shimizu1 (1.Nihon Univ.)

Keywords:

Mist-CVD,In-Sn-Zn-O

Cost reduction is a significant challenge in semiconductor device fabrication. Among thin film fabrication processes, Mist-CVD has advantages such as being safer, lower in cost, and having less environmental impact compared to sputtering and plasma CVD. This is because Mist-CVD involves reacting a misted solution in the atmosphere to form a thin film, a process that does not require a vacuum. In this study, we report on the conditions for fabricating ITZO suitable for TFT production and the oxygenation conditions that enable film quality improvement using atomic oxygen treatment.

Comment

To browse or post comments, you must log in.Log in