[18a-A22-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[18a-A22-10] Deposition of In-Sn-Zn-O thin film by Mist-CVD method and TFT Characteristics.

〇Fumio Horiguchi¹, Shoichi Fukuda¹, Keigo Ebato¹, Kousaku Shimizu¹ (1.Nihon Univ.)

Keywords:

Mist-CVD,In-Sn-Zn-O

Cost reduction is a significant challenge in semiconductor device fabrication. Among thin film fabrication processes, Mist-CVD has advantages such as being safer, lower in cost, and having less environmental impact compared to sputtering and plasma CVD. This is because Mist-CVD involves reacting a misted solution in the atmosphere to form a thin film, a process that does not require a vacuum. In this study, we report on the conditions for fabricating ITZO suitable for TFT production and the oxygenation conditions that enable film quality improvement using atomic oxygen treatment.