The 85th JSAP Autumn Meeting 2024
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Oral presentation21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" : 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[18a-A22-1~13]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 18, 2024 9:00 AM - 12:30 PM JST
Wed. Sep 18, 2024 12:00 AM - 3:30 AM UTC
A22 (TOKI MESSE 2F)
Takanori Takahashi(NAIST)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[18a-A22-1]Applocation of corrosion-resistant and conductive oxides to fuel cell separators and hydrogen generation tehnology

〇Taisei Hattori1, Takashi Tanaka2, Kouichi Matsuo3, Yuji Oda3, Tsutomu Araki1, Kentaro Kaneko4 (1.Ritsumeikan Univ., 2.EYETEC Co., Ltd., 3.IWASAKI ELECTRIC Co., Ltd., 4.RISA)
Comment()
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[18a-A22-2]Synthesis of oxide solid solutions via soli-state ion exchange: a case of (Na,Ag)GaO2

〇ISSEI SUZUKI1, Masao Kita2, Takahisa Omata1 (1.Tohoku Univ., 2.Toyama Natl. Coll. Tech.)
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[18a-A22-3]Deposition of tin oxide film using high-power impulse magnetron sputtering

〇Yuta Saito1, Ohta Takayuki1 (1.Meijo Univ.)
Comment()
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[18a-A22-4]Factors limiting growth rates and determining structure and electrical properties of Ga-doped ZnO films deposited by reactive plasma deposition

〇Hisashi Kitami1,2, Rajasekaran Palani2, Tetsuya Yamamoto2, Hisao Makino2 (1.Sumitomo Heavy Industries, Ltd., 2.Kochi Univ. Tech., Res. Inst.)
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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[18a-A22-5]Structural and electrical properties of Ga-doped ZnO ultrathin films with thicknesses of below 30 nm

〇(PC)Rajasekaran Palani1, Hisashi Kitami2,1, Shintaro Kobayashi3, Katsuhiko Inaba3, Hisao Makino1, Tetsuya Yamamoto1 (1.Kochi Univ. Tech., Res. Inst., 2.Sumitomo Heavy Industries, Ltd., 3.Rigaku Corp.)
Comment()
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[18a-A22-6]Upper limit of carrier transport for Ga-doped ZnO films with high carrier concentration

〇Tetsuya Yamamoto1, Hisashi Kitami1,2, Rajasekaran Palani1, Hisao Makino1 (1.Kochi Univ. Tech., Res. Inst., 2.Sumitomo Heavy Industries, Ltd.)
Comment()
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[18a-A22-7]Reduction in Elasticity of In2O3-based Transparent Conductive Films by H Doping

〇Kanta Kibishi1, Shinri Yamadera1, Tsubasa Kobayashi1, Ichiro Takano1, Shinya Aikawa1 (1.Kogakuin Univ.)
Comment()
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[18a-A22-8]Theoretical Evaluation for Surface Adsorption of by-products in In2O3 Deposition

〇Shogo Shimada1, Tomoya Nagahashi1, Yuki Yoshimoto1, Hajime Karasawa1 (1.KOKUSAI ELECTRIC CORPRATION)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[18a-A22-9]Improvement of hysteresis in IBO TFT by UV irradiation at room temperature under oxygen atmosphere

〇Shinri Yamadera1, Kanta Kibishi1, Shinya Aikawa1 (1.Kogakuin Univ)
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11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[18a-A22-10]Deposition of In-Sn-Zn-O thin film by Mist-CVD method and TFT Characteristics.

〇Fumio Horiguchi1, Shoichi Fukuda1, Keigo Ebato1, Kousaku Shimizu1 (1.Nihon Univ.)
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11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[18a-A22-11]Bias stress instability of solution processed La-doped In2O3 TFTs for CO2 sensors

〇Ryota Kobayashi1, Cao Bowen1, Shinya Aikawa1 (1.Kogakuin Univ)
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12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[18a-A22-12]Evaluation of the optical and electrical properties of Cu2O films deposited by DC sputtering using Cu/CuO mixture target

〇Akio Sekiguchi1, Shinsuke Miyajima1 (1.Tokyo Tech)
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12:15 PM - 12:30 PM JST(3:15 AM - 3:30 AM UTC)

[18a-A22-13]Growth of thick Er-doped CeO2 free from cracks on a mesa-patterned SOI substrate.

〇Tomohiro Inaba1, Xu Xuejun1, Takehiko Tawara2, Hiroo Omi3, Hideki Yamamoto1, Haruki Sanada1 (1.NTT BRL, 2.Nihon Univ., 3.Yamato Univ.)
Comment()
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