[18a-A22-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices" | The 85th JSAP Autumn Meeting 2024

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Oral presentation21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" : 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[18a-A22-1~13]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 18, 2024 9:00 AM - 12:30 PM JST
Wed. Sep 18, 2024 12:00 AM - 3:30 AM UTC

A22 (TOKI MESSE 2F)

Takanori Takahashi(NAIST)

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9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[18a-A22-1]Applocation of corrosion-resistant and conductive oxides to fuel cell separators and hydrogen generation tehnology

〇Taisei Hattori¹, Takashi Tanaka², Kouichi Matsuo³, Yuji Oda³, Tsutomu Araki¹, Kentaro Kaneko⁴ (1.Ritsumeikan Univ., 2.EYETEC Co., Ltd., 3.IWASAKI ELECTRIC Co., Ltd., 4.RISA)

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9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[18a-A22-2]Synthesis of oxide solid solutions via soli-state ion exchange: a case of (Na,Ag)GaO₂

〇ISSEI SUZUKI¹, Masao Kita², Takahisa Omata¹ (1.Tohoku Univ., 2.Toyama Natl. Coll. Tech.)

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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[18a-A22-3]Deposition of tin oxide film using high-power impulse magnetron sputtering

〇Yuta Saito¹, Ohta Takayuki¹ (1.Meijo Univ.)

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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[18a-A22-4]Factors limiting growth rates and determining structure and electrical properties of Ga-doped ZnO films deposited by reactive plasma deposition

〇Hisashi Kitami^1,2, Rajasekaran Palani², Tetsuya Yamamoto², Hisao Makino² (1.Sumitomo Heavy Industries, Ltd., 2.Kochi Univ. Tech., Res. Inst.)

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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[18a-A22-5]Structural and electrical properties of Ga-doped ZnO ultrathin films with thicknesses of below 30 nm

〇(PC)Rajasekaran Palani¹, Hisashi Kitami^2,1, Shintaro Kobayashi³, Katsuhiko Inaba³, Hisao Makino¹, Tetsuya Yamamoto¹ (1.Kochi Univ. Tech., Res. Inst., 2.Sumitomo Heavy Industries, Ltd., 3.Rigaku Corp.)

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10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[18a-A22-6]Upper limit of carrier transport for Ga-doped ZnO films with high carrier concentration

〇Tetsuya Yamamoto¹, Hisashi Kitami^1,2, Rajasekaran Palani¹, Hisao Makino¹ (1.Kochi Univ. Tech., Res. Inst., 2.Sumitomo Heavy Industries, Ltd.)

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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[18a-A22-7]Reduction in Elasticity of In2O3-based Transparent Conductive Films by H Doping

〇Kanta Kibishi¹, Shinri Yamadera¹, Tsubasa Kobayashi¹, Ichiro Takano¹, Shinya Aikawa¹ (1.Kogakuin Univ.)

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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[18a-A22-8]Theoretical Evaluation for Surface Adsorption of by-products in In₂O₃ Deposition

〇Shogo Shimada¹, Tomoya Nagahashi¹, Yuki Yoshimoto¹, Hajime Karasawa¹ (1.KOKUSAI ELECTRIC CORPRATION)

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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[18a-A22-9]Improvement of hysteresis in IBO TFT by UV irradiation at room temperature under oxygen atmosphere

〇Shinri Yamadera¹, Kanta Kibishi¹, Shinya Aikawa¹ (1.Kogakuin Univ)

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11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[18a-A22-10]Deposition of In-Sn-Zn-O thin film by Mist-CVD method and TFT Characteristics.

〇Fumio Horiguchi¹, Shoichi Fukuda¹, Keigo Ebato¹, Kousaku Shimizu¹ (1.Nihon Univ.)

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11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[18a-A22-11]Bias stress instability of solution processed La-doped In₂O₃ TFTs for CO₂ sensors

〇Ryota Kobayashi¹, Cao Bowen¹, Shinya Aikawa¹ (1.Kogakuin Univ)

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12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[18a-A22-12]Evaluation of the optical and electrical properties of Cu₂O films deposited by DC sputtering using Cu/CuO mixture target

〇Akio Sekiguchi¹, Shinsuke Miyajima¹ (1.Tokyo Tech)

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12:15 PM - 12:30 PM JST(3:15 AM - 3:30 AM UTC)

[18a-A22-13]Growth of thick Er-doped CeO₂ free from cracks on a mesa-patterned SOI substrate.

〇Tomohiro Inaba¹, Xu Xuejun¹, Takehiko Tawara², Hiroo Omi³, Hideki Yamamoto¹, Haruki Sanada¹ (1.NTT BRL, 2.Nihon Univ., 3.Yamato Univ.)

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