[18a-A22-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[18a-A22-11] Bias stress instability of solution processed La-doped In₂O₃ TFTs for CO₂ sensors

〇Ryota Kobayashi¹, Cao Bowen¹, Shinya Aikawa¹ (1.Kogakuin Univ)

Keywords:

solution process,La-doped In2O3,Bias stress