[18a-A22-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

12:15 PM - 12:30 PM JST(3:15 AM - 3:30 AM UTC)

[18a-A22-13] Growth of thick Er-doped CeO₂ free from cracks on a mesa-patterned SOI substrate.

〇Tomohiro Inaba¹, Xu Xuejun¹, Takehiko Tawara², Hiroo Omi³, Hideki Yamamoto¹, Haruki Sanada¹ (1.NTT BRL, 2.Nihon Univ., 3.Yamato Univ.)

Keywords:

CeO2,MBE