[18a-A22-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[18a-A22-3] Deposition of tin oxide film using high-power impulse magnetron sputtering

〇Yuta Saito¹, Ohta Takayuki¹ (1.Meijo Univ.)

Keywords:

High-power impulse magnetron sputtering,Oxide semiconductor,Tin oxide