[18a-A22-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[18a-A22-4] Factors limiting growth rates and determining structure and electrical properties of Ga-doped ZnO films deposited by reactive plasma deposition

〇Hisashi Kitami^1,2, Rajasekaran Palani², Tetsuya Yamamoto², Hisao Makino² (1.Sumitomo Heavy Industries, Ltd., 2.Kochi Univ. Tech., Res. Inst.)

Keywords:

transparent conductive film,zinc oxide,ion plating

We have fabricated and provided reactive plasma deposition (RPD) which is an ion plating with low-pressure-direct-current arc discharge. The RPD enables us to achieve highly transparent conductive oxide (TCO) films deposited on amorphous substrates at low temperature. We have investigated the influences of incident-particle fluxes during film growth on the growth and properties of Ga-doped zinc oxide (GZO) films on glass substrates at temperature of 200 °C deposited by RPD. We measured the incident-particle flux of the neutral atoms and their ions for each species quantitatively at the substrate level using a mass-energy analyzer (Hiden, EQP300), a Langumuir probe and a diaphragm gauge during the deposition. We elucidated a relationship between the growth rates, the electrical properties, the alignment between columnar grains and incident flux (IF) properties of Zn species such as neutral Zn atoms and Zn⁺ ions and O species such as neutral O atoms, O⁺ and O₂⁺ ions.