[18a-A22-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[18a-A22-5] Structural and electrical properties of Ga-doped ZnO ultrathin films with thicknesses of below 30 nm

〇(PC)Rajasekaran Palani¹, Hisashi Kitami^2,1, Shintaro Kobayashi³, Katsuhiko Inaba³, Hisao Makino¹, Tetsuya Yamamoto¹ (1.Kochi Univ. Tech., Res. Inst., 2.Sumitomo Heavy Industries, Ltd., 3.Rigaku Corp.)

Keywords:

ZnO,Thin film,Structural Properties

We deposited highly transparent conductive Ga-doped ZnO (source: Ga₂O₃ content of 4 wt.%) with a wurtzite crystal structure on alkali-free glass substrates (Corning EAGLE XG) at a substrate temperature of 200 °C using reactive plasma deposition. The film thickness was varied from 10 to 200 nm. The purpose of this work is to clarify the characteristics of the properties of GZO films, especially the film-thickness dependence of the structure and mechanical properties, and to investigate the correlation between the two properties and the possibility of controlling them, thereby expanding the application area.