[18a-A22-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[18a-A22-6] Upper limit of carrier transport for Ga-doped ZnO films with high carrier concentration

〇Tetsuya Yamamoto¹, Hisashi Kitami^1,2, Rajasekaran Palani¹, Hisao Makino¹ (1.Kochi Univ. Tech., Res. Inst., 2.Sumitomo Heavy Industries, Ltd.)

Keywords:

transparent conductive film,Znic oxide,carrier transport

We have been developing applications for transparent conductive films based on zinc oxide and indium oxide, and have published the results of their implementation. In ZnO polycrystalline thin films on glass substrates, even thin films with a thickness of about 10 nm show a c-axis orientation perpendicular to the substrate surface. in the grains, and columnar orientations structure between the crystallites. When the film thickness is increased while maintaining a carrier concentration of 1.0×-1.1×10²¹ cm^-3, the Hall mobility determined by Hall effect measurements tends to increase in proportion to the film thickness. In this presentation, we will discuss the upper limit of the Hall mobility based on the classical grain size effect theory.