[18a-A23-1~13] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[18a-A23-1] Quantitative Understanding of Temperature Dependence of Sub-threshold Swing in Si MOSFETs at Cryogenic Temperatures

Min-soo Kang¹, Kasidit Toprasertpong,¹, Hiroshi Oka², Takahiro Mori², Mitsuru Takenaka¹, 〇Schin-ichi Takagi¹ (1.The Univ. Tokyo, 2.AIST)

Keywords:

MOSFET

In this study, we systematically evaluated the temperature dependence of the sub-threshold swing (SS) values of Si nMOSFETs and pMOSFETs with different substrate concentrations. It was experimentally found that the SS value of Si pMOSFETs increases with decreasing temperature. The difference in the temperature dependence of SS between nMOSFETs and pMOSFETs was quantitatively reproduced by a DOS model, in which the low energy region of the tail state is the immobile state and the high energy region of the tail state is the mobile state.