[18a-A23-1~13] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[18a-A23-10] Direct observation of electron capture processes in amphoteric defect states achieved by charge pumping in individual defects at MOS interface (13) -Effects of level depth-

〇Toshiaki Tsuchiya¹, Masahiro Hori¹, Yukinori Ono¹ (1.Shizuoka Univ.)

Keywords:

MOS interface defects,amphoteric nature,capture cross section

本講演では両性準位を有するMOS単一界面欠陥のAcceptorlike準位やDonorlike準位における伝導帯電子の捕獲時定数や捕獲電子の再結合時定数に及ぼす両準位のエネルギー深さの影響を検討し，捕獲断面積や再結合過程に関する知見を得る．