[18a-A23-1~13] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18a-A23-3] Understanding Large Vth Shift by Hot Carrier Injection at Cryogenic Temperatures

〇(D)Shunsuke Shitakata^1,2, Hiroshi Oka¹, Kimihiko Kato¹, Takumi Inaba¹, Shota Iizuka¹, Hidehiro Asai¹, Takahiro Mori¹ (1.AIST, 2.APPI, Keio)

Keywords:

Cryo-CMOS,gate stack,hot carrier injection

Recent research has revealed that band-edge states greatly affect cryogenic MOSFET operation. On the other hand, discussions on reliability are still in their early stages. It has been reported that hot carrier degradation increases at cryogenic temperatures, but the mechanism is still unclear. Therefore, we attempted to understand the degradation mechanism by evaluating the temperature dependence of Vth after hot carrier injection and investigating the effect of deuterium annealing.