[18a-A23-1~13] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[18a-A23-4] Measuring Variability and Random Telegraph Noise at Cryogenic Temperatures using Transistor Matrix Array

〇Tomoko Mizutani¹, Kiyoshi Takeuchi¹, Takuya Saraya¹, Hiroshi Oka², Takahiro Mori², Masaharu Kobayashi^1,3, Toshiro Hiramoto¹ (1.IIS, Univ. of Tokyo, 2.AIST, 3.d.lab, Univ. of Tokyo)

Keywords:

Cryo-CMOS,variability,random telegraph noise

Transistor matrix arrays using 65 nm bulk technology were fabricated and measured characteristics variability at cryogenic temperatures. It was confirmed that variability at 1.5K degrades compared with 300 K. Noise measurements using a quasi-parallel measurement technique confirmed existence of extremely slow random telegraph noise (RTN) at 1.5K.