[18a-A23-1~13] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)English Presentation

[18a-A23-5] Precise Extraction of Effective Mobility in Si nMOSFETs at Cryogenic Temperatures Using Quasi-Static C-V Technique

〇(M2)Yutong Chen¹, Zhao Jin¹, Xueyang Han¹, Hiroshi Oka², Takahiro Mori², Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.The Univ. of Tokyo, 2.AIST)

Keywords:

cryogenic,MOSFET,Split C-V

The objective of this study is to experimentally characterize the effective mobility of Si n-channel MOSFETs using the split C-V method across temperatures ranging from 300 K to 4 K. It was observed that the capacitance decreased with increasing measurement frequency in split C-V, with this effect being more pronounced at lower temperatures, which led to inaccuracies in the estimated effective mobility. To address this issue, we propose a method for accurately extracting the surface carrier concentration and resulting mobility using quasi-static split C-V (QSCV) measurements. The experiments conducted demonstrated that the effective mobility estimated by QSCV at 4 K was in close agreement with the Hall mobility. Consequently, quasi-static split C-V (QSCV) proves to be an effective method for extracting the effective mobility of MOSFETs at cryogenic temperatures.