講演情報
[18a-A23-5]Precise Extraction of Effective Mobility in Si nMOSFETs at Cryogenic Temperatures Using Quasi-Static C-V Technique
〇(M2)Yutong Chen1, Zhao Jin1, Xueyang Han1, Hiroshi Oka2, Takahiro Mori2, Kasidit Toprasertpong1, Mitsuru Takenaka1, Shinichi Takagi1 (1.The Univ. of Tokyo, 2.AIST)
キーワード：
cryogenic、MOSFET、Split C-V
The objective of this study is to experimentally characterize the effective mobility of Si n-channel MOSFETs using the split C-V method across temperatures ranging from 300 K to 4 K. It was observed that the capacitance decreased with increasing measurement frequency in split C-V, with this effect being more pronounced at lower temperatures, which led to inaccuracies in the estimated effective mobility. To address this issue, we propose a method for accurately extracting the surface carrier concentration and resulting mobility using quasi-static split C-V (QSCV) measurements. The experiments conducted demonstrated that the effective mobility estimated by QSCV at 4 K was in close agreement with the Hall mobility. Consequently, quasi-static split C-V (QSCV) proves to be an effective method for extracting the effective mobility of MOSFETs at cryogenic temperatures.
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