[18a-B2-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

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[18a-B2-3] Crystal growth for fabrication of InP/InGaAs lateral HBT in SiO₂ cavity

〇Kazuki Kobayashi¹, Shota Watanabe¹, Yasuyuki Miyamoto¹ (1.Tokyo Tech Univ.)

Keywords:

MOVPE

Toward forming lateral HBTs in the SiO₂ cavities, InP crystals were grown on p-InP substrates with SiO₂ cavities by MOVPE. When the diameter of the hole in contact with the InP was large, the growth did not progress to lateral growth until the hole were completely filled. A low cavity height reduced the amount of supply to the growth starting point, and that a long lateral cavity length also reduced the supply to the growth starting point.