[18a-B2-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

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[18a-B2-7] Generation of terahertz electromagnetic wave with difference frequency mixing by using lattice mismatched strain due to growth of InAs quantum dot

〇Takato Suzuki¹, Osamu Kojima¹, Toshiyuki Kaizu^2,3, Osamu Wada³, Takashi Kita³ (1.Chiba Inst. Tech., 2.Kyoto Univ., 3.Kobe Univ.)

Keywords:

terahertz electromagnetic wave,difference frequency mixing,InAs quantum dot

We report the experimental results of the generation of the terahertz electromagnetic waves due to the difference frequency mixing. As the sample, a low-temperature grown GaAs thin film on the InAs quantum dots was used. Because of the lattice mismatched strain, the second-order nonlinear polarization emitting the terahertz waves was created.