[18a-B2-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[18a-B2-8] Circularly polarized photoluminescence properties of InGaAs quantum dot-dilute nitride GaNAs tunnel-coupled structures sandwiched between AlGaAs barriers

〇Shusuke Nomura¹, Satoshi Hiura¹, Junichi Takayama¹, Murayama Akihiro¹ (1.IST, Hokkaido Univ.)

Keywords:

quantum dot,photoluminescence,GaNAs