[18a-B3-1~6] 6.1 Ferroelectric thin films

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[18a-B3-5] Evaluation of thickness dependence on ferroelectricity in (Al,Sc)N-based FeRAM

〇Soshun Doko¹, Naoko Matsui¹, Toshikazu Irisawa¹, Koji Tsunekawa¹, Nana Sun², Yoshiko Nakamura², Kazuki Okamoto², Hiroshi Funakubo² (1.Canon ANELVA Corp., 2.Tokyo Tech.)

Keywords:

Ferroelectric thin film,AlScN,FeRAM

(Al,Sc)N films, which have good ferroelectricity, are being studied as materials for Ferroelectric Random Access Memory (FeRAM). To apply the (Al,Sc)N film to FeRAM, it is necessary to thin device structure. We have previously reported that good ferroelectricity can be obtained in (Al,Sc)N using Pt bottom electrode with thickness of 5 nm or less. In this study, we evaluated the thickness dependence of the crystallinity and ferroelectricity in order to thin (Al,Sc)N film.