Session Details

[18a-B3-1~6]6.1 Ferroelectric thin films

Wed. Sep 18, 2024 10:30 AM - 12:00 PM JST
Wed. Sep 18, 2024 1:30 AM - 3:00 AM UTC
B3 (Exhibition Hall B)
Takeshi Yoshimura(Osaka Metro. Univ.)

[18a-B3-1]Rectangular cathode sputtering for large area deposition of c-Axis oriented and tilted ScAlN thin films

〇(M2)Kohei Ekida1,2, Yohkoh Shimano1,2, Takahiko Yanagitani1,2 (1.Waseda Univ., 2.ZAIKEN)

[18a-B3-2]Preparation of Zn-Ti-N Piezoelectric Thin Films and The Effect of Al Addition

〇Masato Uehara1, Yukari Inoue2, Kenji Hirata1, Tomohiro Terada2, Junichi Kimura2, Hiroshi Yamada1, Morito Akiyama1 (1.AIST, 2.TDK Corp.)

[18a-B3-3]Investigation of low-temp. epitaxial growth of Ce,Mn substituted ZnO thin films
and electrical characterization

〇Moe Sakaguchi1, Hiroya Oiso1, Norifumi Fujimura1, Takeshi Yoshimura1 (1.Osaka Metro. Univ.)

[18a-B3-4]SMR with epitaxial metal Bragg reflectors on top and bottom electrodes to reduce electrode resistance

〇(M1)Misaki Tomioka1,2, Takahiko Yanagitani1,2 (1.Waseda Univ., 2.ZAIKEN)

[18a-B3-5]Evaluation of thickness dependence on ferroelectricity in (Al,Sc)N-based FeRAM

〇Soshun Doko1, Naoko Matsui1, Toshikazu Irisawa1, Koji Tsunekawa1, Nana Sun2, Yoshiko Nakamura2, Kazuki Okamoto2, Hiroshi Funakubo2 (1.Canon ANELVA Corp., 2.Tokyo Tech.)

[18a-B3-6]Fabrication of Al1-xScxN/Si heterostructure by sputtering method Ⅱ

〇Hiroto Yamada1, Koki Yasuoka1, Norifumi Fujimura1, Takeshi Yoshimura1 (1.Osaka Metro. Univ.)