[18a-C41-1~7] 15.6 Group IV Compound Semiconductors (SiC)

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[18a-C41-2] Analysis of the Mechanism for Suppressing Stacking Fault Expansion through High-Energy Ion Implantation

〇Shunta Harada¹, Hitoshi Sakane², Masashi Kato³ (1.Nagoya Univ., 2.SHI-ATEX, 3.NITech)

Keywords:

Bipolar degradation,SiC,Dislocation

The expansion of stacking faults (SF) from basal plane dislocations (BPD) in SiC epitaxial layers is a significant factor hindering the widespread adoption of high-voltage SiC power devices. This study investigates the effect of high-energy helium ion implantation on the behavior of SF expansion under UV illumination. The results reveal that point defects introduced by high-energy ion implantation contribute to the suppression of SF expansion. Through this approach, it is demonstrated that high-energy helium ion implantation can effectively mitigate the expansion of SFs, providing insights into potential methods for enhancing the reliability and performance of high-voltage SiC power devices.