The 85th JSAP Autumn Meeting 2024
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Session Details

Oral presentation15 Crystal Engineering : 15.6 Group IV Compound Semiconductors (SiC)

[18a-C41-1~7]15.6 Group IV Compound Semiconductors (SiC)

Wed. Sep 18, 2024 9:00 AM - 10:45 AM JST
Wed. Sep 18, 2024 12:00 AM - 1:45 AM UTC
C41 (Hotel Nikko 4F)
Shohei Hayashi(Toray Research Center)
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9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[18a-C41-1]Comparison of single Shockley-type stacking fault expansion in 4H-SiC under ultraviolet illumination after hydrogen or fluorine ion implantation

〇Johji Nishio1, Chiharu Ota1, Ryosuke Iijima1 (1.Toshiba R&D Center)
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9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[18a-C41-2]Analysis of the Mechanism for Suppressing Stacking Fault Expansion through High-Energy Ion Implantation

〇Shunta Harada1, Hitoshi Sakane2, Masashi Kato3 (1.Nagoya Univ., 2.SHI-ATEX, 3.NITech)
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[18a-C41-3]Performance improvement of 3C-SiC photocathodes by growth with a single domain epitaxial layer

〇Masashi Kato1, Kongshik Rho1, Jun Fujita1 (1.NITech)
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[18a-C41-4]Effect of Temperature Distribution in Source Powder on Growth Rate of SiC Sublimation Process

〇Shin-ichi Nishizawa1, Wataru Saito1 (1.Kyushu Univ.)
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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18a-C41-5]Study on growth rate and impurity concentrations in fluorescent 4H-SiC

〇Takuma Ban1, Shota Akiyoshi1, Taisei Mizuno1, Naoki Takahashi1, Eri Akazawa2, Atsushi Suzuki2, Weifang Lu3, Satoshi Kamiyama1, Tetsuya Takeuchi1, Motoaki Iwaya1 (1.Meijo Univ., 2.E&E evolution Ltd., 3.Xiamen Univ.)
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10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18a-C41-6]Femtosecond laser irradiation on window-formed SiC diodes for understanding the single-event effects

〇Tomoki Taoka1, Takahiro Makino2, Takuro Tomita1 (1.Tokushima Univ., 2.QST)
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10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18a-C41-7]Polarization control of SiO2/SiC interfacial single photon source by high oxygen pressure thermal oxidation

〇(M2)Rinku Oyama1, Yasuto Hijikata1 (1.Saitama Univ.)
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