[18a-C41-1~7] 15.6 Group IV Compound Semiconductors (SiC)

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[18a-C41-3] Performance improvement of 3C-SiC photocathodes by growth with a single domain epitaxial layer

〇Masashi Kato¹, Kongshik Rho¹, Jun Fujita¹ (1.NITech)

Keywords:

SiC,photocathode,epitaxial layer