[18a-C41-1~7] 15.6 Group IV Compound Semiconductors (SiC)

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[18a-C41-4] Effect of Temperature Distribution in Source Powder on Growth Rate of SiC Sublimation Process

〇Shin-ichi Nishizawa¹, Wataru Saito¹ (1.Kyushu Univ.)

Keywords:

SiC,Wafer,Growth Rate