[18a-C41-1~7] 15.6 Group IV Compound Semiconductors (SiC)

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18a-C41-7] Polarization control of SiO₂/SiC interfacial single photon source by high oxygen pressure thermal oxidation

〇(M2)Rinku Oyama¹, Yasuto Hijikata¹ (1.Saitama Univ.)

Keywords:

SiC,Single photon source,Polarization

It has been reported that high brightness single-photon sources (surface SPSs) are formed near the oxidation interface by thermal oxidation of a SiC substrate. However, the detailed defect structure is still not clear. In a previous investigation of the polarization properties of surface SPS, it was reported that all of them showed linear polarization and three orientations according to the basal orientation of 4H-SiC substrates. In this report, we investigated the polarization properties of samples with oxygen partial pressures of 1.0 atm and 2.0 atm in thermal oxidation of SiC substrates. As a result, it was found that the high-pressure oxidation (2.0 atm) tends to restrict the polarization to linear polarization oriented along a single basal axis.