[18a-C42-1~13] 15.4 III-V-group nitride crystals

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18a-C42-7] Dependence on distance from AlInN underlayer to GaInN quantum wells of PL intensity in GaInN quantum wells

〇Taichi Nishikawa¹, Shoki Arakawa¹, Mitsuki Yanagawa¹, Naoki Shibahara¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Satoshi Kamiyama¹, Kentaro Nonaka², Yoshitaka Kuraoka², Takashi Yoshino² (1.Meijo Univ., 2.NGK Insulator, LTD.)

Keywords:

AlInN,underlayer,hydrogen cleaning

We reported that the use of AlInN underlayer with hydrogen cleaning for high quality GaInN quantum wells results in higher light output (1.2 times) in LED structures than that of GaInN underlayer. On the other hand, when applying the AlInN underlayer to VCSELs, it is necessary to design the position of the AlInN underlayer because the refractive index difference between AlInN and GaN is large and the standing wave distribution is affected by the position of the AlInN underlayer within the cavity. While there is a possibility of intentionally positioning it away from the active region, there is also a possibility that sufficient quality improvement cannot be obtained by positioning it away from the active region. In this study, the dependence on distance from AlInN underlayer to GaInN quantum wells of PL intensity in GaInN quantum wells was investigated.