[18a-P06-1~19] 13.7 Compound and power devices, process technology and characterization

[18a-P06-1] Double-doped GaInSb HEMT Characterization by Quantum-Corrected Monte Carlo Simulation

〇Teruki Ueda¹, Kota Tobe¹, Naoya Kodama¹, Yusuke Shiozawa¹, Akira Endoh¹, Hiroki Fujishiro¹ (1.Tokyo Univ. of Science)

Keywords:

High Electron Mobility Transistor,Monte Carlo Simulation,GaInSb