Presentation Information
[18a-P06-1]Double-doped GaInSb HEMT Characterization by Quantum-Corrected Monte Carlo Simulation
〇Teruki Ueda1, Kota Tobe1, Naoya Kodama1, Yusuke Shiozawa1, Akira Endoh1, Hiroki Fujishiro1 (1.Tokyo Univ. of Science)
Keywords:
High Electron Mobility Transistor,Monte Carlo Simulation,GaInSb
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