Session Details
[18a-P06-1~19]13.7 Compound and power devices, process technology and characterization
Wed. Sep 18, 2024 9:30 AM - 11:30 AM JST
Wed. Sep 18, 2024 12:30 AM - 2:30 AM UTC
Wed. Sep 18, 2024 12:30 AM - 2:30 AM UTC
P06 (Exhibition Hall A)
[18a-P06-1]Double-doped GaInSb HEMT Characterization by Quantum-Corrected Monte Carlo Simulation
〇Teruki Ueda1, Kota Tobe1, Naoya Kodama1, Yusuke Shiozawa1, Akira Endoh1, Hiroki Fujishiro1 (1.Tokyo Univ. of Science)
[18a-P06-2]Device characteristics of AlGaN/GaN CAVETs on Si substrates with strained layer superlattice as current blocking layer and δ-doped conductive buffer layer
〇Toshiharu Kubo1, Ryutaro Miki1, Takashi Egawa1 (1.Nagoya Inst. of Tech.)
[18a-P06-3]Study on p-type MQW structures for the base region in npn-type GaN HBTs
〇Ryosei Inoue1, Tomoki Kojima1, Akira Mase1, Takashi Egawa1, Makoto Miyoshi1 (1.Nagoya Institute of Technology)
[18a-P06-4]Improvement of uniformity by face-to-face ultra-high-pressure annealing observed by scanning internal photoemission microscopy using Au/Ni/n-GaN Schottky contacts
〇Hiroki Imabayashi1, Yasuho Matsumoto1, Kenji Shiojima1, Tetsu Kachi2 (1.Univ. of Fukui, 2.Nagoya Univ.)
[18a-P06-5]Diffusion of silicon in single-crystalline gallium nitride
〇(M1)Keito Mimura1, Ryusuke Nakamura1, Takeyuki Suzuki2, Yoshihiro Ueoka3, Masami Mesuda3 (1.Univ. of Shiga Pref., 2.SANKEN Osaka Univ., 3.Tosoh Corp.)
[18a-P06-6]Reduction of Ni contact resistance for Mg-doped AlN layers by thermal heating
〇Fuga Miyazawa1, Hironori Okumura1, Masataka Imura2 (1.Tsukuba Univ, 2.NIMS)
[18a-P06-7]Characterization of near-conduction-band gap state in Mg-ion-implanted GaN after two-step annealing using MOS structure (2)
〇Uryu Ra1, Yuki Hatakeyama1, Masamichi Akazawa1 (1.RCIQE,Hokkaido Univ.)
[18a-P06-8]Assessment of effects of 850℃ annealing on surface and bulk defects of Mg-ion implanted GaN using MOS structure (3)
〇Genta Shindo1, Yuki Hatakeyama1, Masamichi Akazawa1 (1.RCIQE, Hokkaido Univ.)
[18a-P06-9]XPS Study on Effects of SiO2 Cap Annealing on GaN
〇Masanobu Takahashi1, Yining Jiao1, Masamichi Akazawa1 (1.RCIQE, Hokkaido Univ.)
[18a-P06-10]Structural changes of Ga-oxide layer at SiO2/GaN interface by thermal treatment
〇Ryoya Atsumi1, Mutsunori Uenuma2, Hiroto Tomita1, Shougo Yamada1, Yuya Yamada1, Momoko Yoshida1, Zexu Sun1, Yusuke Hashimoto1, Tomohiro Matsushita1, Mami N.Fujii3, Yukiharu Uraoka1 (1.NAIST, 2.AIST, 3.Kindai University)
[18a-P06-11]Investigation of AlGaN/GaN MOS structure using silicon-based insulator formed by atomic species enhanced chemical vaper deposition
〇Tatsuya Akamatsu1, Sogo Shikata1, Masakazu Furukawa2, Akihiro Wakahara1, Hiroshi Okada1 (1.Toyohashi Univ., 2.Aries Reserch Limited Company)
[18a-P06-12]Effect of diluting solvents on wet etching of N-polar GaN
〇Yunosuke Higuchi1, Ryoko Ono1, Satoko Shinkai1 (1.Kyushu Inst. of Technology)
[18a-P06-13]Mist Chemical Vapor Deposited Alloy Gate Dielectric for Potential Applications in GaN Based MIS Devices
〇Hiroshi Otake1, Yusui Nakamura1, Zenji Yatabe1 (1.Kumamoto Univ.)
[18a-P06-14]Ga2O3 step formation by wet etching
〇(M1)Ryoko Ono1, Amane Kato1, Satoko Shinkai1 (1.Kyutech)
[18a-P06-15]High-Temperature Annealing Behavior of Defect Levels in β-Ga2O3 Single Crystal Substrates
〇Yoshitaka Nakano1, Yuki Ueda2, Kohei Sasaki2, Akito Kuramata2 (1.Chubu Univ., 2.Novel Crystal Technology, Inc.)
[18a-P06-16]600℃ operation of a JFET fabricated by ion implantation on an n-type SiC epilayer
〇Mitsuaki Kaneko1, Shunya Shibata1, Taiga Matsuoka1, Tsunenobu Kimoto1 (1.Kyoto Univ.)
[18a-P06-17]High-Temperature Reliability of Ni/Ti/Nb Ohmic Contact on p-type 4H-SiC
〇(D)Ha Thi Vu1, Vuong Van Cuong1, Shin-Ichiro Kuroki1 (1.RISE,Hiroshima Univ.)
[18a-P06-18]EDMR spectroscopy on interface defects in p-channel 4H-SiC MOSFETs
〇Bunta Shimabukuro1, Sosuke Horiuchi1, Hongyu Zeng1, Mitsuru Sometani2, Hirohisa Hirai2, Heiji Watanabe3, Yusuke Nishiya4, Yuichiro Matsushita4, Takahide Umeda1 (1.Univ. of Tsukuba, 2.AIST, 3.Osaka univ., 4.Quemix Inc)
[18a-P06-19]Spin-dependent-charge-pumping spectroscopy on p-channel 4H SiC MOSFETs
〇(M2)Sosuke Horiuchi1, Hiroki Fukunaga1, Bunta Shimabukuro1, Hiroshi Yano1, Mitsuru Sometani2, Hirohisa Hirai2, Watanabe Heiji3, Takahide Umeda1 (1.Univ. of Tsukuba, 2.AIST., 3.Osaka Univ.)