[18a-P06-1~19] 13.7 Compound and power devices, process technology and characterization

[18a-P06-10] Structural changes of Ga-oxide layer at SiO₂/GaN interface by thermal treatment

〇Ryoya Atsumi¹, Mutsunori Uenuma², Hiroto Tomita¹, Shougo Yamada¹, Yuya Yamada¹, Momoko Yoshida¹, Zexu Sun¹, Yusuke Hashimoto¹, Tomohiro Matsushita¹, Mami N.Fujii³, Yukiharu Uraoka¹ (1.NAIST, 2.AIST, 3.Kindai University)

Keywords:

nitride semiconductor,interfacial oxide layer,photoelectron holography