Presentation Information
[18a-P06-10]Structural changes of Ga-oxide layer at SiO2/GaN interface by thermal treatment
〇Ryoya Atsumi1, Mutsunori Uenuma2, Hiroto Tomita1, Shougo Yamada1, Yuya Yamada1, Momoko Yoshida1, Zexu Sun1, Yusuke Hashimoto1, Tomohiro Matsushita1, Mami N.Fujii3, Yukiharu Uraoka1 (1.NAIST, 2.AIST, 3.Kindai University)
Keywords:
nitride semiconductor,interfacial oxide layer,photoelectron holography
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