[18a-P06-1~19] 13.7 Compound and power devices, process technology and characterization

[18a-P06-11] Investigation of AlGaN/GaN MOS structure using silicon-based insulator formed by atomic species enhanced chemical vaper deposition

〇Tatsuya Akamatsu¹, Sogo Shikata¹, Masakazu Furukawa², Akihiro Wakahara¹, Hiroshi Okada¹ (1.Toyohashi Univ., 2.Aries Reserch Limited Company)

Keywords:

GaN,silicon based insulator,MOS capacitor