Presentation Information
[18a-P06-13]Mist Chemical Vapor Deposited Alloy Gate Dielectric for Potential Applications in GaN Based MIS Devices
〇Hiroshi Otake1, Yusui Nakamura1, Zenji Yatabe1 (1.Kumamoto Univ.)
Keywords:
mist-CVD,GaN,AlTiO
This study focused on characterization Al1−xTixOy alloy gate insulator films using mist CVD. Al1−xTixOy alloy films are promising as gate insulators for GaN-based MIS devices due to their wide bandgap and high permittivity. When the deposition temperature was varied from 250-450 ℃, the bandgap increased with increasing deposition temperature. XRF measurements suggested that the composition ratio could change with the deposition temperature. The reason why the composition ratio changes with deposition temperature is thought to be due to the temperature dependence of the deposition rate of Al2O3 and TiO2.
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