[18a-P06-1~19] 13.7 Compound and power devices, process technology and characterization

[18a-P06-16] 600℃ operation of a JFET fabricated by ion implantation on an n-type SiC epilayer

〇Mitsuaki Kaneko¹, Shunya Shibata¹, Taiga Matsuoka¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)

Keywords:

silicon carbide,junction field effect transistor,high temperature

SiC JFET is one of the devices expected to be applied in high-temperature operation integrated circuits (ICs). We have focused on complementary JFETs, combining p- and n-JFETs, aiming to reduce power consumption. We succeeded in fabricating p- and n-JFETs on the same substrate by forming all p- and n-type regions by ion implantation into a semi-insulating substrate. However, due to the decrease in the resistivity of the semi-insulating substrate with increasing temperature (resulting in increased leakage current), the operating temperature was limited to 400°C. In this study, we report the fabrication of JFETs with a double-well structure on an n-type epitaxial layer to further improve high-temperature operation by suppressing leakage current. We demonstrated high-temperature operation at 600°C.