[18a-P06-1~19] 13.7 Compound and power devices, process technology and characterization

[18a-P06-18] EDMR spectroscopy on interface defects in p-channel 4H-SiC MOSFETs

〇Bunta Shimabukuro¹, Sosuke Horiuchi¹, Hongyu Zeng¹, Mitsuru Sometani², Hirohisa Hirai², Heiji Watanabe³, Yusuke Nishiya⁴, Yuichiro Matsushita⁴, Takahide Umeda¹ (1.Univ. of Tsukuba, 2.AIST, 3.Osaka univ., 4.Quemix Inc)

Keywords:

Semiconductor,4H-SiC MOSFETs,Interface defects

Not all of 4H-SiC MOS interface defects are revealed. One of the revealed MOS interface defects ( "P_bC center" ) was detected by EDMR with n-channel 4H-SiC MOSFET. We detected some EDMR signal with n-channel 4H-SiC MOSFET. We believe these signal are new interface defects which has never reported. In the presentation, we will discuss thier atomic origins.