[18a-P06-1~19] 13.7 Compound and power devices, process technology and characterization

[18a-P06-3] Study on p-type MQW structures for the base region in npn-type GaN HBTs

〇Ryosei Inoue¹, Tomoki Kojima¹, Akira Mase¹, Takashi Egawa¹, Makoto Miyoshi¹ (1.Nagoya Institute of Technology)

Keywords:

GaN,HBT,MQW

Heterojunction bipolar transistors using the wide-gap semiconductor GaN have difficulty in obtaining low-resistance p-type layers due to the high activation energy of acceptors such as Mg. In this study, assuming an npn-type GaN-HBT, we report the feasibility of applying a multiple quantum well (MQW) structure consisting of GaInN/GaN as a method to reduce the lateral resistance of the p-type base layer.