[18a-P06-1~19] 13.7 Compound and power devices, process technology and characterization

[18a-P06-4] Improvement of uniformity by face-to-face ultra-high-pressure annealing observed by scanning internal photoemission microscopy using Au/Ni/n-GaN Schottky contacts

〇Hiroki Imabayashi¹, Yasuho Matsumoto¹, Kenji Shiojima¹, Tetsu Kachi² (1.Univ. of Fukui, 2.Nagoya Univ.)

Keywords:

GaN,Ultra-high-pressure annealing (UHPA),scanning internal photoemission microscopy (SIPM)

A face-to-face method was examined to improve uniformity in ultra-high-pressure annealing (UHPA) process. Au/Ni Schottky contacts were formed on the annealed n-GaN surfaces and measured by using scanning internal photoemission microscopy (SIPM). Compering with the samples upon UHPA buried in GaN powder, better rectification characteristics, larger photocurrent signals, and uniform distribution in SIPM images were obtained. We confirmed improvement of the uniformity by the F-to-F method.