[18p-A22-1~21] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)

[18p-A22-15] Crystal growth of Sb doped r-GeO₂ thin films on r-TiO₂ substates

〇Toya Yagura^1,2, Yuri Shimizu^1,2, Toyosuke Ibi¹, Isao Takahashi¹, Kentaro Kaneko^1,3 (1.Patentix Inc., 2.Col. of Sci. & Eng. Ritsumeikan Univ., 3.RISA)

Keywords:

semiconductor