Session Details
[18p-A22-1~21]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"
Wed. Sep 18, 2024 1:45 PM - 7:30 PM JST
Wed. Sep 18, 2024 4:45 AM - 10:30 AM UTC
Wed. Sep 18, 2024 4:45 AM - 10:30 AM UTC
A22 (TOKI MESSE 2F)
Kohei Sasaki(Novel Crystal Technology), Oshima Yuichi(NIMS)
[18p-A22-1]Electrical properties of Ge-doped α-Ga2O3 films with high electron mobilities grown by mist-CVD
〇Takeru Wakamatsu1, Hirokazu Izumi2, Yuki Isobe1, Hitoshi Takane1, Kentaro Kaneko1,3, Katsuhisa Tanaka1 (1.Kyoto Univ., 2.Hyogo Pref. Inst of Tech., 3.Ritsumeikan Univ.)
[18p-A22-2]Growth and optical characteristics of (Ga, Fe)2O3 alloy thin film
on rh-ITO electrodes by mist CVD
〇Ryo Kondo1, Kazuki Shimazoe1, Hiroyuki Nishinaka1 (1.Kyoto inst.)
[18p-A22-3]Ga2O3 Thin Films Grown by MBE on Ga2O3 (010) Substrates Treated by Nitrogen Radical Irradiation
〇Kura Nakaoka1, Shoki Taniguchi1, Tomoki Uehara1, Jin Inajima1, Satoko Honda1, Masataka Higashiwaki1,2 (1.Osaka Metropolitan Univ., 2.NICT)
[18p-A22-4]Homoepitaxial growth of Si-doped β-Ga2O3(010) layers by MOVPE
〇(M1)Kakeru Kubota1, Junya Yoshinaga1,2, Takahito Okuyama1, Yuma Terauchi1, Shogo Sasaki3, Kazutada Ikenaga2, Kazushige Shiina4, Shuuichi Koseki2, Yuzaburo Ban4, Yoshinao Kumagai1,3 (1.Tokyo Univ. of Agric. and Tech., 2.TAIYO NIPPON SANSO CORPORATION, 3.TUAT FLOuRISH, 4.TAIYO NIPPON SANSO ATI CORPORATION)
[18p-A22-5]Study of MOVPE growth mechanisms of β-Ga2O3 using trimethylgallium
〇(M1)Yuma Terauchi1, Takahito Okuyama1, Kakeru Kubota1, Junya Yoshinaga1,2, Syogo Sasaki3, Masato Ishikawa4, Yoshinao Kumagai1,3 (1.Tokyo Univ. of Agric. and Tech., 2.TAIYO NIPPON SANSO CORPORATION, 3.TUAT FLOuRISH, 4.Gas-Phase Growth Ltd.)
[18p-A22-6]Epitaxial growth of Si-doped β-(AlxGa1-x)2O3 thin films by mist CVD
〇Shoma Hosaka1, Hiroki Miyake1,2, Hiroyuki Nishinaka1 (1.Kyoto Inst. Tech., 2.MIRISE)
[18p-A22-7]Growth and Characterization of NiO Thin Films on (-201) β-Ga2O3 by Mist CVD
〇Gen Yasui1, Hiroki Miyake1,2, Hiroyuki Nishinaka1 (1.Kyoto Inst. of Tech, 2.MIRISE)
[18p-A22-8]Growth of Rocksalt-structured MgZnO/MgO Double Hetero and Superlattice Structures by Mist CVD Method
〇Kotaro Ogawa1, Hiroyuki Aichi1, Toshiki Mitomi1, Kyosuke Tanaka1, Tomohiro Yamaguchi1, Tohru Honda1, Takeyoshi Onuma1 (1.Kogakuin Univ.)
[18p-A22-9]Well Composition Dependence of Rocksalt-structured MgZnO/MgO Quantum Wells
Grown by Mist CVD Method
〇Hiroyuki Aichi1, Kotaro Ogawa1, Toshiki Mitomi1, Tomohiro Yamaguchi1, Tohoru Honda1, Takeyoshi Onuma1 (1.Kogakuin Univ.)
[18p-A22-10]Epitaxial Growth of MgO-NiO-ZnO Film Lattice-Matching with MgO Substrate
〇Shintarou Iida1, Takumi Ikenoue1, Masao Miyake1 (1.Kyoto Univ.)
[18p-A22-11]Effect of SiO2 passivation film on leakage current in β-Ga2O3-SBD
〇Ryuji Sakai1, Takuma Nanjo1, Yohei Yuda1, Tetsuro Hayashida1, Munetaka Noguchi1, Kohei Ebihara1, Rina Tanaka1, Masayuki Furuhashi1, Tatsuro Watahiki1 (1.Mitsubishi Electric)
[18p-A22-12]Cross-Sectional SEM Observation of Killer Defects in (001) HVPE-Grown Thick Epi Film β-Ga2O3 Schottky Barrier Diodes
〇(M2)Yuto Otsubo1, Kohei Sasaki2, Chia-Hung Lin2, Jun Arima3, Minoru Fujita3, Katsumi Kawasaki3, Toshiyuki Oishi1, Makoto Kasu1 (1.Saga Univ., 2.Novel Crystal Technology, Inc., 3.TDK Corporation)
[18p-A22-13]Precursor-solvent dependent of film structure for Nb-doped TiO2 films fabricated by mist chemical vapor deposition.
〇Rento Naito1, Mako Yoshida1, Aki Onoda1, Megumi Ariga1, Ayaka Nakamura1, Tomohito Sudare2, Ryo Nakayama2, Ryota Shimizu2, Kentaro Kaneko3, Yasushi Sato4, Taro Hitosugi2, Naoomi Yamada1 (1.Chubu Univ., 2.Univ. Tokyo, 3.Ritsumeikan Univ., 4.Okayama Univ. Sci.)
[18p-A22-14]Evaluation of Sources for Mist Chemical Vapor Deposition of Nb-doped TiO2 Conducting Films
〇Ayaka Nakamura1, Megumi Ariga1, Rento Naito1, Tomohito Sudare2, Ryo Nakayama2, Ryota Shimizu2, Kentaro Kaneko3, Taro Hitosugi2, Naoomi Yamada1 (1.Chubu Univ., 2.Univ. Tokyo, 3.Ritsumeikan Univ.)
[18p-A22-15]Crystal growth of Sb doped r-GeO2 thin films on r-TiO2 substates
〇Toya Yagura1,2, Yuri Shimizu1,2, Toyosuke Ibi1, Isao Takahashi1, Kentaro Kaneko1,3 (1.Patentix Inc., 2.Col. of Sci. & Eng. Ritsumeikan Univ., 3.RISA)
[18p-A22-16]Fabrication of n-type r-GeO2 thin films.
〇Yuri Shimizu1,2, Toya Yagura1,2, Toyosuke Ibi1, Isao Takahashi1, Kentaro Kaneko1,3 (1.Patentix Inc., 2.Col. of Sci. & Eng. Ritsumeikan Univ., 3.RISA)
[18p-A22-17]Fabrication of amorphous Ga-O-S films toward realizing p-channel transistors
〇(M2)Takamitsu Funada1, Kazuki Koreishi1, Takuto Soma1, Kohei Yoshimatsu1, Akira Ohtomo1 (1.Tokyo Tech., Dept. Chem. Sci. Eng.)
[18p-A22-18]Fabrication of In2O3 thin film transistors using In(OH)3 as PLD target
〇(M1C)Hikaru Sadahira1, Prashant Ghediya2, Hiromichi Ohta2, Yusaku Magari2 (1.IST-Hokkaido Univ., 2.RIES-Hokkaido Univ.)
[18p-A22-19]Impact of in-situ AlOx passivation on 2-nm-thick InOx for performance and stability improvement
〇CHIATSONG CHEN1, Yuki Yoshimoto2, Wen-Hsin Chang1, Toshifumi Irisawa1, Maeda Tatsurou1 (1.AIST, 2.KOKUSAI ELECTRIC)
[18p-A22-20]Microwave remote plasma enhanced atomic layer deposition for In2O3 thin film
〇Yuuto Kawato1, Takanori Takahashi1, Toshihiro Tamai2, Shunichi Mikami2, Yukiharu Uraoka1 (1.NAIST, 2.HORIBA STEC)
[18p-A22-21]Highly efficient water molecule heating based on semiconductor stacking fabrication technology
〇(M2)Tomoki Otsuka1, Ryuichi Matsuda2, Toshiya Watanabe2, Saki Ota2, Kentaro Kaneko3 (1.Col. of Sci. & Eng. Ritsumeikan Univ., 2.Mitsubishi Heavy Industries, Ltd., 3.RISA)