[18p-A22-1~21] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-A22-16] Fabrication of n-type r-GeO₂ thin films.

〇Yuri Shimizu^1,2, Toya Yagura^1,2, Toyosuke Ibi¹, Isao Takahashi¹, Kentaro Kaneko^1,3 (1.Patentix Inc., 2.Col. of Sci. & Eng. Ritsumeikan Univ., 3.RISA)

Keywords:

r-GeO2,Ultra Wide Bandgap,Power device