[18p-A22-1~21] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-A22-3] Ga₂O₃ Thin Films Grown by MBE on Ga₂O₃ (010) Substrates Treated by Nitrogen Radical Irradiation

〇Kura Nakaoka¹, Shoki Taniguchi¹, Tomoki Uehara¹, Jin Inajima¹, Satoko Honda¹, Masataka Higashiwaki^1,2 (1.Osaka Metropolitan Univ., 2.NICT)

Keywords:

gallium oxide,doping,nitrogen

We previously tried nitrogen (N) doping into Ga₂O₃ substrates by N radical irradiation; however, the distribution of N atoms remained in a near-surface region and thus was not effective as a N doping method. In this study, we found that N doping can be achieved by means of growing Ga₂O₃ thin films by molecular beam epitaxy (MBE) on N-radical irradiated Ga₂O₃ (010) substrates. From secondary ion mass spectrometry (SIMS) analyses, we confirmed that high-density N atoms over 3 × 10¹⁹ cm^-3 were uniformly doped in the MBE-grown Ga₂O₃ thin films.