[18p-A22-1~21] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-A22-4] Homoepitaxial growth of Si-doped β-Ga₂O₃(010) layers by MOVPE

〇(M1)Kakeru Kubota¹, Junya Yoshinaga^1,2, Takahito Okuyama¹, Yuma Terauchi¹, Shogo Sasaki³, Kazutada Ikenaga², Kazushige Shiina⁴, Shuuichi Koseki², Yuzaburo Ban⁴, Yoshinao Kumagai^1,3 (1.Tokyo Univ. of Agric. and Tech., 2.TAIYO NIPPON SANSO CORPORATION, 3.TUAT FLOuRISH, 4.TAIYO NIPPON SANSO ATI CORPORATION)

Keywords:

gallium oxide,metal-organic vapor phase epitaxy,Si-doped

In this talk, we report on our attempt to control n-type conductivity by Si doping in β-Ga₂O₃(010) homoepitaxial growth by MOVPE. As a result, the Si concentration could be linearly controlled in the range 10¹⁵-10¹⁹ cm^-3. The carrier density was almost equal to the Si concentration, confirming that Si functions as a shallow donor.