[18p-A22-1~21] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-A22-6] Epitaxial growth of Si-doped β-(Al_xGa_1-x)₂O₃ thin films by mist CVD

〇Shoma Hosaka¹, Hiroki Miyake^1,2, Hiroyuki Nishinaka¹ (1.Kyoto Inst. Tech., 2.MIRISE)

Keywords:

Ga2O3,mist CVD

β-Ga₂O₃ has gained attentions because of its high breakdown field. β-(Al_xGa_1-x)₂O₃(β-AlGaO), which can form 2DEG on β-AlGaO/Ga₂O₃ interface, is important factor to develop Ga₂O₃-based device applications. In this work, we demonstrated Si-doped β-AlGaO thin films via mist CVD. High crystallinity and coherent growth of β-AlGaO thin films were observed and the thin films also exhibits low resistance.