[18p-A22-1~21] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[18p-A22-7] Growth and Characterization of NiO Thin Films on (-201) β-Ga₂O₃ by Mist CVD

〇Gen Yasui¹, Hiroki Miyake^1,2, Hiroyuki Nishinaka¹ (1.Kyoto Inst. of Tech, 2.MIRISE)

Keywords:

power devices,nickel oxide,mist CVD

Gallium oxide, which is expected to be applied to power devices because of its excellent properties and the ability to fabricate bulk single crystals, faces a major challenge in practical applications due to the difficulty of controlling p-type conductivity. In this study, we approached this issue by depositing p-type nickel oxide thin films of the oxide semiconductor using the mist CVD method. The deposited thin films showed excellent crystallinity and surface flatness, indicating the potential of gallium oxide for future devices.