[18p-A23-1~17] Fundamentals and Latest Technology Trends of Atomic Layer Process (ALP)

1:30 PM - 2:00 PM JST(4:30 AM - 5:00 AM UTC)

[18p-A23-1] Atomic Layer Deposition using Highly Reactive Reactants and Precursors

〇Hideharu Shimizu¹ (1.Taiyo Nippon Sanso)

Keywords:

Atomic layer,Reactant,Deposition

Atomic Layer Deposition (ALD) is an essential technology to realize 3-D, highly stacked semiconductor devices using new materials. To achieve both economic and technical requirements, various precursors have been developed over the past few decades. However, lower temperature deposition is desired the most recently since the more highly stacked devices are designed. Given the requirement, we have considered and demonstrated hydrogen peroxide vaopr and anhydrous hydrazine vapor as a novel oxidiing reagent and nitriding reagent, respectively, for thermal ALD processes. ALD processes using highly reactive reagents will be introduced and discussed in the presentation, which have been demonstrated by our team and other teams.